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PTF180601
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
Description
The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device lifetime and reliability.
EDGE EVM Performance EVM & Efficiency vs. Power Output
VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz
4 40
Features
* * Broadband internal matching Typical two-tone performance - Average output power = 30 W - Gain = 16.5 dB - Efficiency = 35% Typical CW performance - Output power at P-1dB = 75 W - Gain = 15.5 dB - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI Drift Capable of handling 10:1 VSWR @ 28 V, 60 W (CW) output power
*
EVM RMS (Average %)..
*
3 Efficiency 30
Efficiency (%)
* * *
2
20
1 EVM 0 35 37 39 41 43 45
10
0
PTF180601C Package 21248 PTF180601E Package 30248
Output Power (dBm)
ESD: Electrostatic discharge sensitive device -- observe handling precautions!
RF Characteristics at TCASE = 25C unless otherwise indicated
EDGE Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 800 mA, P OUT = 22 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude Modulation Spectrum @ 400 KHz Modulation Spectrum @ 600 KHz Gain Drain Efficiency
Symbol
EVM (RMS) ACPR ACPR Gps D
Min
-- -- -- -- --
Typ
1.7 -60 -73 16.5 32
Max
-- -- -- -- --
Units
% dBc dBc dB %
Two-Tone Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ = 800 mA, POUT = 60 W PEP, f = 1930 MHz, Tone Spacing = 1 MHz Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps D IMD
Min
15 30 --
Typ
16.5 35 -30
Max
-- -- -28
Units
dB % dBc 2004-05-03
PTF180601
Electrical Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A VDS = 28 V, V GS = 0 V VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 800 mA VGS = 10 V, V DS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.135 3.2 0.01
Max
-- 1.0 -- 4.0 1.0
Units
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 60 W CW) PTF180601C PTF180601E TSTG RJC PTF180601E PD PTF180601C
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 159 0.91 180 1.03 -40 to +150 1.1 0.97
Unit
V V C W W/C W W/C C C/W C/W
Data Sheet
2
2004-05-03
PTF180601
Typical Performance (measurements taken in production test fixture, at TCASE = 25C unless otherwise indicated)
EDGE EVM Performance at 26 V
VDD = 26 V, IDQ = 0.8 A, f = 1989.8 MHz
5 50 40 Efficiency
EDGE Modulation Spectrum Performance Mod Spectrum vs. Power Output
VDD = 28 V, IDQ = 0.8 A, f = 1989.8 MHz
-55 50 40 400 KHz Efficiency 30 20 10 600 KHz -80 35 37 39 41 43 45 0
EVM RMS (Average %)..
4 3 2 1 EVM 0 35 37 39 41 43 45
Modulation Spectrum (dB)
-60 -65 -70 -75
Efficiency (%)
30 20 10 0
Output Power (dBm)
Output Power (dBm)
EVM & Modulation Spectrum Performance
f = 1989.8 MHz, Output Power = 22 W
8 -40 400 KHz
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 0.8 A, f = 1990 MHz
18 70 60 Gain
Modulation Spectrum (dB)
EVM RMS (Average %) .
7 6 5 4 3 2 1 0.0 0.2 0.4 0.6 0.8 1.0 EVM
-50 -60
17 16
600 KHz
-70 -80 -90 -100 -110 1.4
15 14 Efficiency 13 12 11 30 35 40 45 50
40 30 20 10 0
1.2
Quiscent Drain Current (A)
Output Power (dBm)
Data Sheet
3
2004-05-03
Efficiency (%)
50
Gain (dB)
Efficiency (%)
PTF180601
Typical Performance (cont.)
Output Power, Gain & Efficiency (at P-1dB) vs. Frequency
VDD = 28 V, IDQ = 0.8 A
19 Efficiency Output Pow er 17 Gain 45 55
Power Gain vs. Output Power
VDD = 28 V, f = 1990 MHz
18
IDQ = 1.0 A Power Gain (dB)
50 Output Power (dBm), Efficiency (%)
18 Gain (dB)
17
IDQ = 800 mA IDQ = 600 mA
16
16
40
15 1900
1920
1940
1960
1980
2000
35 2020
15 0 1 10 100
Frequency (MHz)
Output Power (W)
Broadband Test Fixture Performance
VDD = 28 V, IDQ = 0.8 A, POUT = 60 W
20 70
Broadband Test Fixture Performance
VDD = 28 V, IDQ = 0.8 A, POUT = 10 W
20 30 Gain 27
Gain (dB), Return Loss (dB)
Gain (dB), Return Loss (dB)
15 10 5 0 -5 -10 -15
Gain
15 10 5 0 -5 -10 -15
Efficiency (%)
21 18 Efficiency 15 12 9 Return Loss 6 2020
50 Efficiency 40
Return Loss -20 1900 1930
1960
1990
30 2020
-20 1900
1930
1960
1990
Frequency (MHz)
Frequency (MHz)
Data Sheet
4
2004-05-03
Efficiency (%)
60
24
PTF180601
Typical Performance (cont.)
Output Power vs. Supply Voltage
IDQ = 0.8 A, f = 1990 MHz
50
Intermodulation Distortion vs. Output Power
VDD = 28 V, IDQ = 0.8 A, F1 = 1990 MHz, F2 = 1991 MHz
-20 -30
Output Power (dBm)
49
IMD (dBc)
48 47 46 45 44 22 24 26 28 30 32
-40 -50 -60 -70
3rd Order
5th Order
7th Order -80 32 34 36 38 40 42 44 46 48
Supply Voltage (V)
Output Power, PEP (dBm)
Gate-Source Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
Normalized Bias Voltage
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0.40 1.53 2.67 3.80 4.93 6.07
0
20
40
60
80
100
Case Temperature (C)
Data Sheet
5
2004-05-03
PTF180601
Broadband Circuit Impedance Data
R -->
D
Z0 = 50
0. 2
Z Source
Z Load
G S
S T OW A RD GEN E RA TO
Z Load
2020 MHz 1900 MHz
0 .1
Frequency
MHz 1900 1920 1930 1960 1990 2000 2020
Z Source
R 9.9 10.3 10.3 10.7 11.0 11.1 11.3 jX 0.55 0.56 0.50 0.23 -0.15 -0.30 -0.58 R
Z Load
jX 4.1 3.7 3.6 3.5 3.2 3.0 2.9 2.7
0.0
0.1
0.2
ARD LOAD HS TOW E NGT
4.3 4.3 4.5 4.7 4.8 5.0
Z Source
2020 MHz
0.1
Reference Circuit
VDD VGG
R1 220 V +C1 10F C2 0.1F R2 220V C3 10pF L2
C6 10pF L1 2.7H
+C7 10F
C8 0.1F
l4
C5 10pF RF_IN D.U.T.
l6
C10 0.4pF
l1
l2
C4 1.1pF
l3
C9 10pF
l5
l7
l8
l9
l10
C11 1.3pF
RF_OUT
Reference Circuit Schematic for 1990 MHz
Data Sheet
6
2004-05-03
0.3
1900 MHz
PTF180601
Reference Circuit (cont.)
VGG
C2
C1
+
GND
R2 L2 C3 C6
L3 R3
VDD
+
C7 C8
R1
C10 RF_IN C4 INPUT OUTPUT C5 C9 C11 RF_OUT
180601_01
Reference circuit1 (not to scale) Circuit Assembly Information DUT PTF180601 PCB 1.27 mm [0.050"] thick, r = 6.0 Microstrip Electrical Characteristics at 1990 MHz 0.140 , 50 0.068 , 50 0.112 , 9.24 0.064 , 78 0.127 , 6.64 0.206 , 65 0.035 , 9 0.077 , 21.87 0.075 , 50 0.023 , 50
LDMOS Transistor TMM6 Dimensions: L x W (mm.) 10.16 x 1.88 4.95 x 1.88 7.14 x 18.31 4.83 x 0.76 8.13 x 26.42 15.24 x 1.14 2.54 x 18.16 5.26 x 6.53 5.46 x 1.88 1.65 x 1.88
2 oz. copper, both sides Dimensions: L x W (in.) 0.400 x 0.074 0.195 x 0.074 0.281 x 0.721 0.190 x 0.030 0.320 x 1.040 0.600 x 0.045 0.100 x 0.715 0.207 x 0.257 0.215 x 0.074 0.065 x 0.074
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10
1 Gerber files for this circuit are available on request.
Data Sheet
7
2004-05-03
PTF180601
Reference Circuit (cont.)
Component C1, C7 C2, C8 C3, C5, C6, C9 C4 C10 C11 L1 L2 R1, R2 R3 Description Capacitor, 10 F, 35 V, SMD Capacitor, 0.1 F, 50 V Capacitor, 10 pF Capacitor, 1.1 pF Capacitor, 0.4 pF Capacitor, 1.3 pF Chip Inductor, 2.7 H Ferrite, 6 mm Resistor, 220 Resistor, 1.0 Manufacturer Digi-Key Digi-Key ATC ATC ATC ATC Digi-Key Philips Digi-Key Digi-Key P/N or Comment PCS6106TR-ND Tantalum TE Series PCC103BCT-ND 100B 100 100B 1R1 100B 0R4 100B 1R3 PCD1287CT-ND 53/3/4.6-452 P220ECT 1.0 PCT
Data Sheet
8
2004-05-03
PTF180601
Package Outline Specifications
Type PTF180601C PTF180601E Package Outline 21248 30248 Package Description Earless ceramic Thermally enhanced, flange mount Marking PTF180601C PTF180601E
Package 21248
( 45 X 2.72 [.107]) 4.830.51 [.190.020]
C L
D
9.78 [.385]
LID 9.40 +0.10 -0.15 [.370+.004 ] -.006
C L
19.430.51 [.765.020]
G
2X 12.70 [.500]
SPH 1.58 [.062]
19.810.20 [.780.008]
0.51 [.020] 1.02 [.040]
0.025 [.001]
-A-
S
3.610.38 [.142.015] 20.57 [.810]
PKG_248_1
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9
2004-05-03
PTF180601
Package Outline Specifications (cont.) Package 30248
(45 X 2.72 [.107])
C L
D
9.78 [.385] 19.43 0.51 [.765.020]
2X 4.830.51 [.190.020]
S
LID 9.40 +0.10 -0.15 [.370+.004 ] -.006
C L
G
2X 12.70 [.500] 27.94 [1.100] 1.02 [.040] 19.810.20 [.780.008]
2X R1.63 [.064] 4X R1.52 [.060]
SPH 1.57 [.062] 3.760.38 [.142.015]
0.0381 [.0015]
-A0.51 [.020]
34.04 [1.340]
P K G _248_0
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]
Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
10
2004-05-03
PTF180601 Confidential, Limited Internal Revision History: 2004-05-03 Previous Version: 2003-12-22, Data Sheet Page Subjects (major changes since last revision) PTF180601E added.
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2004-05-03 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 2004-05-03

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